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DMN2004K
1
0.9
T J = 25°C
0.5
0.4
0.8
0.7
0.6
V GS = 1.8V
0.3
V GS = 4.5V,
I D = 540mA
0.5
V GS = 2.5V
0.2
V GS = 10V,
I D = 280mA
0.4
0.3
V GS = 4.5V
0.1
0.2
0
0.2
0.4
0.6
0.8 1 1.2
0
-50
-25
0 25
50
75
100
125 150
I D , DRAIN CURRENT (A)
Figure 7 On-Resistance vs. Drain Current and Gate Voltage
10,000
T j , JUNCTION TEMPERATURE ( ° C)
Figure 8 Static Drain-Source, On-Resistance vs. Temperature
1
V GS = 0V
1,000
100
TJ = 150°C
TJ = 100°C
0.1
T A = 125 ° C
T A = 85°C
T A = 150 ° C
T A = 25 ° C
10
0.01
T A = 0 ° C
1
T J = 25 °C
T A = -25°C
T A = -55 ° C
0.1
2
4
6 8
10
12 14
16
18
20
0.001
0
0.5
1
1
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Drain Source Leakage Current vs. Voltage
V SD , DRAIN- SOURCE VOLTAGE (V)
Figure 10 Reverse Drain Current vs. Source-Drain Voltage
120
V GS = 10V
T A = -55°C
T A = 25 ° C
100
80
C iss
f = 1MHz
V GS = 0V
0.1
T A = 85 ° C
60
40
T A = 150 ° C
C oss
20
C rss
0.01
1
10
100
1,000
0
0
2
4
6
8
10 12
14 16
18
20
I D , DRAIN CURRENT (mA)
Figure 11 Forward Transfer Admittance vs. Drain Current
V DS , DRAIN SOURCE VOLTAGE (V)
Figure 12 Capacitance Variation
DMN2004K
Document number: DS30938 Rev. 9 - 2
4 of 6
www.diodes.com
July 2013
? Diodes Incorporated
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